RESIDUAL STRESSES AT AN OXIDE‐SILICON INTERFACE
MV Whelan, AH Goemans, LMC Goossens - Applied Physics Letters, 1967 - pubs.aip.org
Residual stresses occurring at an oxide-silicon interface are studied by measuring the
bending of an oxidized silicon slice which results when the oxide is removed from one face …
bending of an oxidized silicon slice which results when the oxide is removed from one face …
The accuracy and reliability of commercial heart rate monitors.
MJ Burke, MV Whelan - British Journal of Sports Medicine, 1987 - bjsm.bmj.com
In recent years increasing emphasis has been placed on the benefits of exercise to normal
healthy adults as well as to those recovering from heart attacks and other illnesses. As an …
healthy adults as well as to those recovering from heart attacks and other illnesses. As an …
Leakage currents of n+ p silicon diodes with different amounts of dislocations
MV Whelan - Solid-State Electronics, 1969 - Elsevier
Leakage currents in n+ p silicon planar-diodes appeared to be related to the presence of
dislocations, revealed by an X-ray topographic technique, in and near the n+ regions …
dislocations, revealed by an X-ray topographic technique, in and near the n+ regions …
ON THE ROLE OF SODIUM AND HYDROGEN IN THE Si–SiO2 SYSTEM
E Kooi, MV Whelan - Applied Physics Letters, 1966 - pubs.aip.org
MOS-capacitance measurements combined with neutron activation analysis show that
positive charge at oxidized silicon surfaces can be increased by the presence of sodium in …
positive charge at oxidized silicon surfaces can be increased by the presence of sodium in …
Resistive MOS-gated diode light sensor
MV Whelan - Solid-State Electronics, 1973 - Elsevier
This paper presents an exploration of the possibility of using a resistive MOS-gated diode as
a light sensor. It is shown that the maximum useful scan frequency of a single device is …
a light sensor. It is shown that the maximum useful scan frequency of a single device is …
Resistive-insulated-gate arrays and their applications-An exploratory study
MV Whelan, LA Daverveld… - Philips Research …, 1975 - ui.adsabs.harvard.edu
A resistive-insulated-gate electrode with a voltage gradient applied along it has many uses.
In this paper we present an exploratory investigation of a number of novel circuits in which …
In this paper we present an exploratory investigation of a number of novel circuits in which …
[PDF][PDF] Electrical behaviour of defects at a thermally oxidized silicon surface
MV Whelan - 1970 - research.tue.nl
TER VERKRIJGING VAN DE GRAAD VAN DOCTOR IN DE TECHNISCHE
WETENSCHAPPEN AAN DE TECHNISCHE HOGESCHOOL TE EINDHOVEN OP GEZAG …
WETENSCHAPPEN AAN DE TECHNISCHE HOGESCHOOL TE EINDHOVEN OP GEZAG …
[CITATION][C] Photoplethysmography: Selecting optoelectronic components
MJ Burke, MV Whelan - Medical and Biological Engineering and …, 1986 - Springer
THE WORK presented below stems from the development of a phototransducer intended for
use in a low-power, portable, battery-operated heart-rate monitor. The tong-term aim is to …
use in a low-power, portable, battery-operated heart-rate monitor. The tong-term aim is to …
[PDF][PDF] Specificity of the Tuberculin Skin Test Is
MV Whelan, JA Gutiérrez-Pabello - 2012 - fmvz.unam.mx
MATERIALS AND METHODS Antigens. Bovine and avian PPD were purchased from
Pronabive (Register Sagarpa B-0653-035). The full-length and histidine-tagged …
Pronabive (Register Sagarpa B-0653-035). The full-length and histidine-tagged …
Recombination-generation currents at a SiO2-Si interface
MV Whelan - 1969 International Electron Devices Meeting, 1969 - ieeexplore.ieee.org
The surface recombination-generation current in planar devices has already been
extensively studied especially with gated diode structures. This current exhibits a peak as a …
extensively studied especially with gated diode structures. This current exhibits a peak as a …